国家/地区 中国（4）
IPC部 B（4）
IPC大类 B05（4） B82（4） C01（4）
C23（4） B01（2） B32（2）
H01（2）
IPC小类 B05D（4）
IPC B82Y030/00（4）
发明人
公开年 2011（4）
申请年 2010（2） 
专利权人

Manufacturing graphene comprises preparing a subject substrate, forming a metal thin film, supplying a carbon source material, heating, diffusing carbon atoms, and forming graphene on the subject substrate.

KWON S, PARK K, YOON E, KWAK J, KWON S Y, YOON U

Fabricating graphene to fabricate FET, comprises forming alloy catalyst layer on substrate using sputtering method and/or evaporation method, and forming graphene layer on alloy catalyst layer by supplying hydrocarbon gas onto substrate.

WOO Y, SEO D, SEO S, CHUNG H, KANG S, HEO J, SEO S A, CHUNG H J, KANG S R, HEO J S, WOO Y S, JUNG H J, HUH J S, YEO R, XU D, HUH J, JUNG H

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Producing graphene, comprises introducing a solution of a metal alkoxide in a solvent into a decomposition apparatus, which includes a first region having a high temperature to cause thermal decomposition of the metal alkoxide.

COLEMAN K S