国家/地区 美国（3） 世界知识产权组织（2）
IPC部 B（3）
IPC大类 B05（3） C01（3） H01（3）
B82（2）
IPC小类 B05D（3）
IPC C01B031/04（3）
发明人
公开年
申请年 2013（3）
专利权人

Etching method of graphene, involves etching exposed portions of graphene to form etched graphene structure, after applying resist to surface of graphene opposite to patterned substrate.

ANDERSON K, SJONG A

Formation of graphene for electronic device, involves forming graphene layer on catalytic metal layer, forming organic-inorganic hybrid film in uncured state on graphene layer, and curing.

MOON J, JUNG K, KANG E, KANG O, JEONG G, KANG E S

Forming graphene on surface, comprises forming material substrate, depositing carbon-containing material layer or metal material layer, applying heating/cooling cycle, cooling carbon material layer and removing material and carbon layers.

KUB F J, ANDERSON T, FEYGELSON B N