国家/地区 美国（7）
IPC部 B（7）
IPC大类 B05（7） C10（6） B82（3）
C23（3） C09（2） F16（2）
IPC小类 B05D（7）
IPC B05D001/02（7） B05D005/08（6） C10M103/02（5）
C10M177/00（4） B05D007/14（3） B82Y030/00（3）
C10M103/04（3） C23C016/26（3） C23C016/40（3）
B05D003/04（2） F16C033/04（2）
发明人 SUMANT A V（7） BERMAN D（6） ERDEMIR A（6）
CHOI J（3）
公开年 2018（2） 2021（2）
申请年
专利权人 UCHICAGO ARGONNE LLC（7）

Forming low friction, wear-resistant surface involves e.g. preparing graphene by chemical exfoliation of polycrystalline graphite or highly-oriented pyrolytic graphite, suspending graphene-oxide in solvent and adding boron nitride.

SUMANT A V, AYYAGARI V A

Forming low friction wear surface comprises e.g. disposing over substrate solution of nanodiamonds and hexagonal boron nitride 2D material to form first sliding component, and sliding first sliding component against second sliding component.

SUMANT A V, ERDEMIR A, BERMAN D

Interacting with reduced friction, comprises providing relative movement between first surface having disposed graphene oxide flakes on it, which is free of oil, with second surface having diamond like coating, and interacting.

SUMANT A V, ERDEMIR A, CHOI J, BERMAN D

Solution-processed wear component article of manufacture comprises oil-free solution-processed graphene oxide flakes and substrates, one of which has diamond-like coating and forms opposing wear component of solution-processed material.

BERMAN D, CHOI J, ERDEMIR A, SUMANT A V

Method of forming low friction wear surface on substrate e.g. bearing, involves arranging graphene over substrate, arranging nanoparticles comprising nickel and/or diamond over graphene and forming several graphene scrolls on substrate.

BERMAN D, ERDEMIR A, SUMANT A V

Formation of low friction wear surface involves disposing graphene over substrate and disposing nanoparticles over substrate.

SUMANT A V, BERMAN D, ERDEMIR A

Method for forming graphene on substrate used in mechanical system, involves forming solution processed graphene on substrate so as to establish low friction wear surface.

SUMANT A V, ERDEMIR A, CHOI J, BERMAN D