国家/地区 中国（3）
IPC部 B（3）
IPC大类 B05（3）
IPC小类 B05D（3）
IPC B82Y030/00（3） B82Y040/00（3） C01B031/02（3）
B32B003/10（2） B32B009/04（2） C01B031/04（2）
C23C016/26（2） H01B001/00（2） H01B001/04（2）
发明人
公开年 2011（2）
申请年 2011（3）
专利权人

Graphene structure for producing three-dimensional shape of e.g. electronic circuit, comprises template having three-dimensional shape and rod shape, graphene to cover portion of outer circumference of template, and supporting layers.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Film, useful in semiconductor devices for displays devices and field effect transistors, comprises a base layer having amino groups, and a reduced graphene oxide layer formed on the base layer.

KOBAYASHI T, TOSHIYUKI K

Manufacturing graphene comprises preparing a subject substrate, forming a metal thin film, supplying a carbon source material, heating, diffusing carbon atoms, and forming graphene on the subject substrate.

KWON S, PARK K, YOON E, KWAK J, KWON S Y, YOON U