国家/地区 美国（5）
IPC部 B（5）
IPC大类 B05（5）
IPC小类 B05D（5）
IPC B82Y040/00（5） B82Y030/00（4） B05D005/12（3）
C01B031/00（3） C01B031/02（3） C01B031/04（3）
B32B009/00（2） C23C016/26（2） H01B001/04（2）
发明人
公开年 2011（3） 2012（2）
申请年 2011（5）
专利权人

Producing graphene, comprises fixing seed crystal to support substrate, providing feedstock adjacent to seed crystal about the location, and applying laser beam to heat portion of seed crystal and portion of feedstock.

HAUCK J P

Manufacture of graphene nano belt for electric component, involves preparing single atom layer and forming layer on insulating substrate, and directly growing.

CHEN J, DING G, JIANG M, TANG S, WANG C, XIE X

Preparation of graphene-type conductive material involves applying oxide graphene sol and metal salt solution and/or metal colloidal solution on substrate layer, separating, forming solid film and treating at specified condition.

LIANG M, ZHI L

Antistatic film, useful e.g. as transparent or semitransparent antistatic films, comprises conductive particles comprising single-layer or multi-layer graphene and binder.

KOO C M, HONG S M, HWANG S S, KWAK S, BAEK K Y, MIN K H, PARK Y D, KWAK H L, KIM M H, KIM B R, CHOI S, HAN T H, CHOI S S, KWAK S J

Manufacturing graphene comprises preparing a subject substrate, forming a metal thin film, supplying a carbon source material, heating, diffusing carbon atoms, and forming graphene on the subject substrate.

KWON S, PARK K, YOON E, KWAK J, KWON S Y, YOON U