国家/地区 美国（3）
IPC部 B（3）
IPC大类 B05（3）
IPC小类 B05D（3）
IPC B05D005/12（2） C01B031/02（2） C01B031/04（2）
C23C016/26（2） C23C016/56（2） C30B029/02（2）
发明人
公开年 2011（2）
申请年 2009（3）
专利权人

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Structure, useful for fabricating electrical devices, comprises layer of graphene supported on a substrate, which is pre-selected to have a specified coefficient of thermal expansion, for inducing controlled stress in graphene layer.

QUITORIANO N J, KAMINS T I, BRATKOVSKI A M

Graphene or graphite thin film used for diaphragm structure, is formed on cubic crystal silicon carbide crystal thin film using cubic silicon carbide crystal thin film having specific orientation formed on silicon substrate.

SUEMITSU M, KONNO A, MIYAMOTO Y, MAKI S, ASSEUSI G, YU M