国家/地区 韩国（5）
IPC部 B（5）
IPC大类 B05（5） B82（4） B32（3）
C01（3） H01（3） C09（2）
C23（2）
IPC小类 B05D（5）
IPC B05D005/12（4） B82Y030/00（4） B82Y040/00（3）
C01B031/02（3） B05D003/02（2） B32B009/04（2）
C23C016/26（2） H01B001/04（2）
发明人
公开年 2011（5）
申请年 2011（5）
专利权人

Film, useful in semiconductor devices for displays devices and field effect transistors, comprises a base layer having amino groups, and a reduced graphene oxide layer formed on the base layer.

KOBAYASHI T, TOSHIYUKI K

Method for manufacturing graphene thin film of capacitor, involves manufacturing precursor solution, dispersing graphite oxide powder into solvent, and forming graphene thin film by generation of static attraction.

KIM K B, HEECHANG Y, SEONG M B, BEOM K G, CHANG Y H, MIN P S

Antistatic film, useful e.g. as transparent or semitransparent antistatic films, comprises conductive particles comprising single-layer or multi-layer graphene and binder.

KOO C M, HONG S M, HWANG S S, KWAK S, BAEK K Y, MIN K H, PARK Y D, KWAK H L, KIM M H, KIM B R, CHOI S, HAN T H, CHOI S S, KWAK S J

Polyimide nanocomposite used for sensor, battery and for storing hydrogen, is obtained thermosetting mixed solution of graphene oxide and modified polyamic acid.

HA C, CHOI M, KIM G, HA C S, CHOI M C, KIM G Y

Manufacturing graphene comprises preparing a subject substrate, forming a metal thin film, supplying a carbon source material, heating, diffusing carbon atoms, and forming graphene on the subject substrate.

KWON S, PARK K, YOON E, KWAK J, KWON S Y, YOON U