国家/地区 美国（5） 中国（4） 世界知识产权组织（4） 日本（3） 欧洲专利局（EPO）（2） 台湾（2）
IPC部 B（5） C（5） H（4）
IPC大类 B32（5）
IPC小类 B32B（5）
IPC C23C016/26（5）
发明人
公开年 2012（2）
申请年 2009（2）  2011（2） 
专利权人

Method for transferring graphene film to substrate, involves contacting exposed graphene surface with target substrate formed by removing growth substrate that is contacted by second surface of graphene film.

JOHNSON B Y, LIU X, MAZUMDER P

Making thermoacoustic element involves arranging graphene film on metal substrate/forming laminate structure by stacking nonmetal substrate on substrate/removing substrate from laminate structure/forming through-holes in nonmetal substrate.

JIANG K, LIN X, XIAO L, FAN S, IM H Y, FAN F Y

Method for transferring layer of graphene from transitional metal substrate onto target substrate, involves conforming layer of graphene to target substrate to form graphene on substrate assembly by applying hydrostatic pressure.

YAGER T A

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Forming a single or few layer graphene film, useful as e.g. transistor device, comprises forming graphene film on substrate, coating film with protective support layer and etching surface of substrate to release film and protective layer.

CECCO A, DRESSELHAUS M, KONG J, CECCO A R, DRESSELHAUS M S