国家/地区 美国（6） 韩国（4） 世界知识产权组织（4） 中国（3） 欧洲专利局（EPO）（2） 日本（2） 俄罗斯（2） 台湾（2）
IPC部 B（6）
IPC大类 B32（6）
IPC小类 B32B（6）
IPC C01B031/04（6）
发明人
公开年 2010（4）
申请年 2009（6）
专利权人

Method for isolating graphene thin film involves causing graphene thin film and polymer-based coating to be released from catalyst thin film, after curing polymer-based coating.

VEERASAMY V S, VEERASAMY V

Electronic device comprises porous graphene layer including graphene nanoribbon and electrically connecting two graphene electrodes.

KAERKKAEINEN A M, HAQUE S M, COLLI A, PASANEN P M, JOHANNES K L M, UUSITALO M A, LEHTINIEMI R K, KARKKAAINEN A M, HAQUE S, KARKKAINEN L M J, KARKKAINEN L, UUSITALO M, LEHTINIEMI R, KARKKAINEN L M Y, KAERKKAEINEN L M J

Graphene used for device and graphene sheet, comprises etched edge portion comprising functional group of carbonyl, carboxy, hydroxy, formyl and/or oxycarbonyl.

CHOI J, CHOI W M, HONG B H, CHOI W, HONG B

AA' stacked graphite for use as e.g. electrode material for flexible display, comprises graphene stacked in sequence of AA', where AA' sequence is alternate graphene layers exhibiting AA' stacking translated by half hexagon.

AHN J, LEE J, LEE S, LEE W, LEE U, LEE J K, LEE S H, AHN J P, LEE S C, LEE W S

Forming graphene layer used in e.g. transistors, solar panels, involves mixing carbon source with molten solvent, precipitating carbon source from solvent to form graphite layer, and separating graphite layer into several graphene layers.

SUNG C, HU S C, LIN I, YU C, SONG J

Graphene or graphite thin film used for diaphragm structure, is formed on cubic crystal silicon carbide crystal thin film using cubic silicon carbide crystal thin film having specific orientation formed on silicon substrate.

SUEMITSU M, KONNO A, MIYAMOTO Y, MAKI S, ASSEUSI G, YU M