国家/地区 美国（7） 中国（4） 世界知识产权组织（4） 台湾（3） 日本（2）
IPC部 B（8）
IPC大类 B32（8）
IPC小类 B32B（8）
IPC B32B009/04（8）
发明人 FAN F Y（2） FAN S（2） JIANG K（2）
LIN X（2） LIN X Y（2） XIAO L（2）
公开年 2012（8）
申请年 2011（4）  2012（3） 
专利权人 HON HAI PREC.（2） HONGFUJIN PR.（2） UNIV TSINGHU.（2）

Making graphene/carbon nanotube composite structure, comprises growing graphene film on surface of metal substrate by chemical vapor deposition method, cooling metal substrate, and providing carbon nanotube film structure on graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Graphene structure used in high power pulse magnetron sputtering preparation, has upper layer that is provided with amorphous carbon film and lower layer that is provided with multilayer graphene film.

KE P, WANG A, ZHANG X

Making doped single graphene sheets involves oxidizing graphite to non-electrically conductive graphite oxide followed by exfoliating in solvent, depositing metal or metal oxides, and reducing to electrically conductive graphene sheets.

DO I, DRZAL L T, MONGA A

Ribbon of graphene, useful in FET structure and three/two terminal device structure, where ribbon of graphene provided with surface and arm chair edges is in physical contact with surface of single crystal substrate.

DIMITRAKOPOULOS C

Graphene/carbon nanotube composite structure comprises carbon nanotube film structure having carbon nanotubes or nanotube wires and micropores; and graphene film located on a surface of film structure, and covering all of the micropores.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Patterning graphene involves forming passivation material pattern on growth substrate, defining inverse pattern of exposed surface that facilitates graphene growth; and supplying carbon-containing gas to pattern to form patterned graphene.

HOFMANN M, KONG J

Nanosheet used in applications e.g. superconductors, capacitors comprises silicon carbide layer having first and second surfaces; a first graphene layer formed of specific graphenes; and a second graphene layer formed of specific graphenes.

CHEN K, HU M, KUO C, CHEN L, CHEN K H, HU M S, KUO C C, CHEN L C

Method of directly synthesizing uniform multilayer graphene of semiconductor device, involves passing reaction gas into reaction chamber, after temperature in reaction chamber reaches specific level.

ZHONG Z, LEE S, LEE K