国家/地区 韩国（2）
IPC部 B（2）
IPC大类 B82（2）
IPC小类 B82B（2）
IPC B82B003/00（2） C01B031/04（2）
发明人 CHOI B L（2）
公开年
申请年 2012（2）
专利权人 SAMSUNG ELEC.（2） UNIV SUNGKYU.（2）

Making nanowire-graphene structure used in e.g. electric device by growing pinned layer on substrate, growing nanowires on graphene layer, separating pinned layer from substrate, and forming covalently bonded material on pinned layer.

CHOI B L, LEE E K, LEE J H, WHANG D M

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T