国家/地区 韩国（3）
IPC部 B（3）
IPC大类 B82（3）
IPC小类 B82B（3）
IPC B82B003/00（3） B82B001/00（2） C01B031/02（2）
C01B031/04（2）
发明人 PARK H（3）
公开年 2015（3）
申请年 2014（3）
专利权人 UNIV HANYANG.（2）

Manufacture of three-dimensional graphene nanostructure for electrode, involves forming graphene nano-cup spacer by mixing graphene, titanium catalyst precursor and ionic liquid, irradiating microwave and etching with acidic solution.

PARK H, SRIDHAR V

Producing graphene layer, comprises producing substrate, preprocessing substrate for generating hydrophilicity on one side of substrate, coating graphene oxide layer on substrate, and obtaining reduced graphene oxide layer.

TAE H H, PARK H

Manufacture of graphene nanostructure involves preparing graphene oxide, dispersing graphene oxide into base solution such that amine and oxygen groups are supplied from base solution into graphene oxide, and heating obtained solution.

TAE H H, PARK H