国家/地区 韩国（3）
IPC部 B（3）
IPC大类 B82（3） C01（3）
IPC小类 B82B（3）
IPC B82B003/00（3） C01B031/02（3）
发明人
公开年 2014（2）
申请年 2012（3）
专利权人 KOREA INST SCI TECHNOLOGY（3）

Manufacture of doped graphene for manufacturing semiconductor, involves mixing graphite powder and acid solution, oxidizing, drying, impregnating graphite oxide solid to organic compound aqueous solution, microwave heating and reducing.

LEE S S, KIM H, PARK M, LIM S H, GON S J, KWANG H L, KIM T A

Polyphase carbon nanostructures comprise graphene sheath made of graphene layer, and diamond nano-flakes inserted into graphene sheath.

LEE W S, LEE H J, BAIK Y J, PARK J K

Fabricating graphene-controlled nano-graphite, used as basic material for e.g. lithium-ion battery electrode, comprises preparing graphene powders and fabricating graphene-controlled nano-graphite through heat treatment of graphene powders.

LEE J K