国家/地区 美国（3） 世界知识产权组织（3）
IPC部 B（3）
IPC大类 B82（3）
IPC小类 B82B（3）
IPC B82B003/00（3）
发明人
公开年 2011（3）
申请年
专利权人

Forming a nano-perforated graphene material, comprises forming an etch mask defining an array of holes over a graphene material and patterning the array of holes into the graphene material.

ARNOLD M, GOPALAN P, SAFRON N S, KIM M, ARNOLD M S

Making graphene used for coating graphene-coatable materials by providing starting material comprising carbonaceous material sulfur and excluding transition metal and heating starting material.

CHENG I F, MCILROY D N, FOUTCH J, GRIFFITHS P R

Manufacture of doped graphene thin film for electrochromic devices comprises hetero-epitaxially growing intermediate graphene thin film on catalyst thin film, and doping intermediate graphene thin film with n- or p-type dopants.

VEERASAMY V S, VEERASAMY V