国家/地区 韩国（3） 欧洲专利局（EPO）（2） 日本（2） 美国（2）
IPC部 B（3）
IPC大类 B01（3） B82（3） C01（3）
IPC小类 B01J（3）
IPC B01J023/755（3）
发明人
公开年 2014（3）
申请年 2014（2） 
专利权人

Preparing graphene, which is used for manufacturing semiconductor circuit, comprises supplying gas including carbon dioxide, methane and water on metal catalyst, and reacting and cooling the resultant.

SON I H, LEE S J

Preparation of porous graphene involves processing biomass-based carbon source with catalyst, obtaining intermediate product and heat-preserving intermediate at predetermined conditions.

ZHU J, LIU Z, ZHOU G, LIU D, LIU X, TANG Y, WANG E, ZHANG J, ZHENG Y

Method for manufacturing graphene structure using carbon black, involves heat treating graphite painted candles, graphite painted candles are mixed with carbon black and carbon black is mixed with wet duster.

LEE J H, LEE B H, KWAN W L, REYUN K L