国家/地区 日本（4）
IPC部 B（4）
IPC大类 B82（4） C01（4） C23（4）
H01（3） B32（2）
IPC小类 B82B（4）
IPC B82B003/00（4）
发明人 FAN F Y（2） FAN S（2） JIANG K（2）
LIN X（2） LIN X Y（2） XIAO L（2）
公开年 2012（4）
申请年 2011（3） 
专利权人 HON HAI PREC.（2） HONGFUJIN PR.（2） UNIV TSINGHU.（2）

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Making a graphene or carbon nanotube composite structure, comprises e.g. growing graphene film on first surface of metal substrate by chemical vapor deposition method, and combining carbon nanotube film structure with graphene film.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Graphene/carbon nanotube composite structure comprises carbon nanotube film structure having carbon nanotubes or nanotube wires and micropores; and graphene film located on a surface of film structure, and covering all of the micropores.

JIANG K, LIN X, XIAO L, FAN S, LIN X Y, FAN F Y

Fabricating structure comprising graphene sheet equipped with metal pads, comprises synthesizing graphene sheet on many metal pads that are laid on membrane of dielectric material, and optionally eliminating the membrane.

ZENASNI A, CORAUX J, IVANOVAHRISTOVA V, LANDIS S, PERNEL C