国家/地区 德国（2）
IPC部 B（2）
IPC大类 B82（2） C01（2） C23（2）
IPC小类 B82B（2）
IPC B82B003/00（2）
发明人
公开年
申请年
专利权人

Method for production of atomic bilayer nanotape, involves oxidizing portion of monolayer to provide oxidized portion, and removing oxidized portion to provide atomic layer nanotape comprising transition metal dichalcogenide material.

HARUTYUNYAN A R, LI X

Partially altering defect area in layer on substrate, comprises receiving the layer including graphene and some defect areas in graphene, and exposing the layer to gas including hydrogen, boron, aluminum, gallium, indium and/or thallium.

MILLER S, MILLER S A