国家/地区 美国（3）
IPC部 B（3）
IPC大类 B82（3） C01（3） H01（3）
IPC小类 B82B（3）
IPC B82B003/00（3）
发明人
公开年 2012（2）
申请年 2012（3）
专利权人

Growing patterned single-crystalline graphene comprises depositing a graphene growth barrier that defines a pattern on a substrate surface, and growing graphene on the substrate surface, around the graphene growth barrier.

ARNOLD M S, GOPALAN P, SAFRON N S, KIM M

Making graphene nanoribbon comprises contacting poly(phenylene ethynylene) polymer, annulating compound, and catalyst system comprising metal catalyst and protic acid, and oxidizing the arylannulated polymer product.

DICHTEL W R, ARSLAN H, URIBEROMO F J

Graphene heterostructure used for electronic components used in electronic circuits, and for electronic devices, consists of graphene layer positioned between two encapsulation layers.

GEIM A K, NOVOSOLEV K S, GORBACHEV R V, PONOMARENKO L A, GEIM A, NOVOSELOV K, GORBACHEV R, PONOMARENKO L, NOVOSELOV K S