国家/地区 韩国（4） 美国（2） 世界知识产权组织（2）
IPC部 B（4） C（4）
IPC大类 B01（4） C01（4） B82（3）
IPC小类 B01J（4）
IPC B01J019/12（4）
发明人 KIM H（4）
公开年 2013（2） 2014（2）
申请年 2012（4）
专利权人 KOREA ADV IN.（2） KOREA ADVANC.（2） KOREA INST S.（2）

Manufacture of doped graphene for manufacturing semiconductor, involves mixing graphite powder and acid solution, oxidizing, drying, impregnating graphite oxide solid to organic compound aqueous solution, microwave heating and reducing.

LEE S S, KIM H, PARK M, LIM S H, GON S J, KWANG H L, KIM T A

Hierarchical structure of graphene-carbon nanotubes is obtained by growing graphene into carbon nanotubes having hierarchical structure by adding metal nanoparticles on graphene, and is metal-functionalized by metal precursor.

BAE S, KIM H, OH I, BAE S H, KIM H J, OH I K

Manufacturing boron-doped reduced graphene, useful as semiconductor with p-type characteristics, comprises adding boron oxide to graphene oxide, removing solvent from resulting solution to obtain solid mixture, and heating the solid mixture.

KIM H, DA YOUNG Y, PARK M, LIM S H, GON S J, LEE S S

Manufacture of graphene/carbon nanotube nano structure involves preparing and irradiating graphite and compound of catalyst metal and ionic liquid with microwave.

OH I, SRIDHAR V, KIM H, OH I K, VADAHANAMBI S, KIM H J