国家/地区 美国（5）
IPC部 C（5）
IPC大类 C01（5） B32（2）
IPC小类 C01B（5）
IPC B32B037/00（2） C01B031/04（2）
发明人 HYEON T（2）
公开年 2016（2）
申请年 2014（2） 
专利权人 BASIC SCI INST（5）

Preparing graphene useful in transistor, comprises supplying substituted alkyne based precursor to chamber including first zone and second zone, vaporizing or sublimating precursor in first zone, and depositing sublimed precursor.

LEE H Y, SEO S, CHOI J, LEE H

Catalyst used for producing hydrogen peroxide, comprises carbon-based support, and catalytic moiety containing metal-nitrogen bonding structure, and bonded to carbon-based support.

HYEON T, SUNG Y, SHIN H, LEE B, JUNG E, SHIN H J, LEE B H, CHUNG E Y, LI B

Apparatus for manufacturing cell sheet, has graphene layer that is formed adjacently in electrode, and patterned electrode that is formed adjacently in support layer.

KIM D, CHOI S, HYEON T, KIM S, CHO H, CHO K, HONG C S, HWAN H T, HYEONG K D, JU K S, RIM C H, WON C G

Graphene transfer process for large-area graphene used for electronic device e.g. flexible electronic devices involves incubating graphene/growth substrate with water vapor treatment, and coating vapor treated graphene/growth substrate.

YOU X, LUO D, RUOFF R S

Graphene hydrogel for preparing graphene hydrogel nanocomposite material and article e.g. energy storage device, comprises pores between laminated graphene sheets.

KIM S O, MAITI U N, LIM J W, LIM J, NARAYAN M U