国家/地区 韩国（3） 美国（2）
IPC部 C（3）
IPC大类 C01（3） H01（2）
IPC小类 C01B（3）
IPC C01B032/182（3） C01B032/184（2）
发明人
公开年 2018（3）
申请年 2017（3）
专利权人 ELECTRONICS TELECOM RES INST（3）

Manufacturing nitrogen-doped graphene involves preparing base grapheme, and irradiating base graphene with ultraviolet rays under nitrogen atmosphere at ambient temperature.

PARK J

Forming heterojunction structure used e.g. in material engineering, comprises providing graphene pattern on substrate, applying current to heat graphene pattern and forming two-dimensional material layer on graphene pattern.

YU Y, JUN Y Y

Three-dimensional graphene structure preparation involves forming graphene precursor by heating carbohydrate and gas generator, forming graphene structure having cavity by carbonizing graphene precursor, and then forming nanopores.

KIM T, YOU I, KIM B N, KIM I G, JUNG S, PARK S, YOUNG K T, KYU Y I, NA K B, GYOO K I, HOON J S, JUN P S