国家/地区 韩国（4） 美国（2）
IPC部 B（4）
IPC大类 C01（4） B01（2） B82（2）
C08（2） H01（2）
IPC小类 C01B（4）
IPC C01B031/02（3） B01J019/12（2） B82B003/00（2）
C08K003/04（2） H01B001/04（2）
发明人 KIM H（4）
公开年 2014（2）
申请年 2012（2） 
专利权人 KOREA INST SCI TECHNOLOGY（4）

Manufacture of doped graphene for manufacturing semiconductor, involves mixing graphite powder and acid solution, oxidizing, drying, impregnating graphite oxide solid to organic compound aqueous solution, microwave heating and reducing.

LEE S S, KIM H, PARK M, LIM S H, GON S J, KWANG H L, KIM T A

Making nanoparticles of target material, involves mixing graphene oxide with aqueous solvent to give aqueous solution, mixing target material with organic solvent to give organic solution, and mixing aqueous solution with organic solution.

LIM J A, SONG Y, HONG J, YOO D Y, KIM H, SONG Y W, HONG J M, KIM H S

Manufacturing boron-doped reduced graphene, useful as semiconductor with p-type characteristics, comprises adding boron oxide to graphene oxide, removing solvent from resulting solution to obtain solid mixture, and heating the solid mixture.

KIM H, DA YOUNG Y, PARK M, LIM S H, GON S J, LEE S S

Electroconductive particle comprising a polymer microparticle and graphene coating layer grafted on the polymer microparticle, useful in anisotropic conductive film for packaging electronic devices.

LEE S, KIM K, LIM S H, PARK M, KIM J K, KIM H, LEE H, KIM G, IM S, KIM J, KIM K H, KIM H S, YI S S, I H J, SU LEE S, SUK KIM H, JEONG LEE H, GYEONG KIM J, HO IM S, LEE S S