国家/地区 韩国（2）
IPC部 B（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC
发明人
公开年 2013（2）
申请年 2012（2） 
专利权人 KOREA INST SCI TECHNOLOGY（2）

Manufacturing boron-doped reduced graphene, useful as semiconductor with p-type characteristics, comprises adding boron oxide to graphene oxide, removing solvent from resulting solution to obtain solid mixture, and heating the solid mixture.

KIM H, DA YOUNG Y, PARK M, LIM S H, GON S J, LEE S S

Passive element layer of e.g. display element used in e.g. electric equipment, has main layer that is provided with electromagnetic wave attenuation and heat radiation function at near-field region, and is equipped with graphene layer.

KIM S W, HONG B H, CHOI J, KANG J, HWANG S H, BUNG C J, HUI H B, HWI H S, MO G J, U KIM S, HEE H B