国家/地区 美国（2）
IPC部 B（2）
IPC大类 B82（2） C01（2）
IPC小类 B82B（2）
IPC B82B001/00（2）
发明人 DUAN X（2）
公开年
申请年
专利权人 UNIV CALIFOR.（2）

Growing graphene used e.g. in graphene material, comprises annealing metal substrate up to growth temperature for annealing time period and in presence of non-reducing gas, and introducing gas mixture to grow graphene over the substrate.

DUAN X, ZHOU H

Graphene nanomesh for forming transistor, sensor, and graphene structure, comprises sheet of graphene having periodically arranged apertures, where the apertures have a substantially uniform periodicity and substantially uniform neck width.

DUAN X, HUANG Y, BAI J