国家/地区 美国（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B031/04（2）
发明人 LIANG C（2）
公开年
申请年
专利权人 SHANGHAI INS.（2）

Manufacture of gas sensor for nitrogen oxide, involves placing microheater platform substrate having graphene-covered surface, to chemical vapor deposition reactor, injecting inert gas, hydrogen and sulfur source gas, reacting and cooling.

LI T, GUO L, LIANG C, WANG Y

Method for doping sulfur on graphene involves placing graphene in chemical vapor deposition reaction chamber, introducing sulfur source gas to perform sulfur doping on graphene and cooling hydrogen and inert gas atmosphere.

LI T, LIANG C, WANG Y