国家/地区 中国（2） 美国（2）
IPC部 C（5）
IPC大类 C01（5） C25（2）
IPC小类 C01B（5）
IPC C01B031/04（5）
发明人 LIANG C（5）
公开年 2014（5）
申请年 2012（3）  2013（2） 
专利权人 CHUNG SHAN I.（3） SHANGHAI INS.（2）

Preparing sulfur doped graphene using chemical vapor deposition method comprises e.g. providing metal substrate, placing in chemical vapor deposition reaction chamber, introducing inert gas, carrying out aeration and exhaust gas treatment.

LI T, LIANG C, WANG Y

Transferring graphene to intermediate layer used for preparing graphene electric device, involves mixing polydimethylsiloxane glue with raw substrate, where polydimethylsiloxane glue is solidified into polydimethylsiloxane transition layer.

LI T, LIANG C, WANG W, WANG Y

Device for continuously producing graphene flakes by electrochemical technique, has grading collection unit for receiving graphene flakes separated by filtration unit and separating different sized graphene flakes.

CHENG Y, YEH T, LI L, GEE C, LIN C, WANG P, LIANG C

Making shaped graphene sheets comprises providing initial material of artificial oriented graphite and shaping to obtain laminated material, electrochemically processing laminated material using electrolyte solution, and filtering solution.

LIN C, LIANG C, GEE C, WANG P, CHENG Y

A novel device which can continuously produce graphene flakes by electrochemical method.

WANG P, LIANG C, GEE C, CHENG Y, LIN C, WANG P L, LIANG C W, GEE C M, CHENG Y C, LIN C J