国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B031/04（2）
发明人 LIN T（3）
公开年 2013（3）
申请年 2012（2） 
专利权人 CHINESE ACAD.（2）

Preparation of high-quality graphene comprises adding carboxylic acid, carbonyl-containing compound, dry ice, liquid ammonia, carbonate salt, and/or amine-containing compound to graphite, and peeling.

CHEN J, HUANG F, LIN T

Manufacture of graphene powder for e.g. photoelectric device, involves decomposing organic substances by fast heating in oxyhydrogen flame, and reconfiguring produced active carbon atoms on insulating substrate or catalyst substrate.

HUANG F, LIN T

Forming bilayer hexagonal graphene single crystal domain used as e.g. transistor involves heating catalyst having metal substance and alloy, into chemical vapor deposition reaction chamber, adding carbon/hydrogen/protective gas and cooling.

BI H, HUANG F, LIN T, WAN D