国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B031/04（4） C01B032/184（2）
发明人 PENG P（4）
公开年 2015（3）
申请年 2014（4）
专利权人 CHANGZHOU 2D.（3） CHANGZHOU ER.（3）

Preparing graphene thin films comprises processing copper foil blank and growing graphene films on copper foil where processing copper foil blank includes e.g. cleaning copper foil blank plasma, decontaminating and treating with oxide layer.

JIN H, LIU Z, QI X, PENG P, YANG H, ZHANG Z, ZHANG W, ZHANG X, DENG K

Preparing graphene thin film used as transparent conductive electrode, involves spacing carrier by spacer and superimposing metal substrate to obtain multi-layer metal substrate structure, and transferring carrier to reactor.

JIN H, PENG P, WANG Z, ZHOU Z, CHANG B, CHEN X, YIN H

Preparation of graphene involves heating metal substrate in reaction chamber, supplying gas mixture of oxygen and inert gas to reaction chamber, feeding mixed gas of hydrogen and inert gas and supplying hydrogen and carbon source.

JIN H, LIU Z, PENG P, ZHANG Z, ZHANG W, ZHOU Z

Transferring graphene comprises transferring graphene grown on a double-sided film substrate to a target substrate.

GU Y, JIN H, PENG P, WU W, LOU X