国家/地区 中国（3）
IPC部 B（3）
IPC大类 C01（3） B01（2）
IPC小类 C01B（3）
IPC C01B031/04（2）
发明人 WANG C（3）
公开年 2015（3）
申请年 2014（3）
专利权人

Preparation of amorphous silicon graphene-like nanosheet used as semiconductor material for photocatalytic hydrogen production involves mixing magnesium powder and silica, air sintering in the presence of hydrogen/argon gas and pickling.

HU B, MENG Y, SHI W, YAN Y, LIU J, WANG C, CAI F

Method for modifying e.g. I-V characteristics, of graphene i.e. semiconductor film, involves placing graphene film in vacuum environment, and radiating graphene film with electron beam to obtain graphene material.

HUANG C, CHU C, CHIU S, WANG C, WEI C, CHUNG C, WU B, HUANG J, QIU S, WANG J, ZHU J, WEI J, ZHONG C, HUANG C H, CHU C W, CHIU S M, WANG C C, WEI C M, CHUNG C J, WU B H

Reduced graphene oxide/copper nanocomposite powder is obtained by reducing graphene oxide, sensitizing, activating, supporting copper uniformly on graphene, and obtaining powder having copper uniformly supported on graphene sheet layer.

HUANG J, LI M, JIANG X, LUO G, SHEN Q, WANG C, ZHANG L