国家/地区 美国（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B032/186（2）
发明人 WU T（2）
公开年
申请年
专利权人 SHANGHAI INS.（2）

Preparing patterned graphene, comprises forming accommodating passage in silicon carbide base, providing catalyst and insulating substrate, placing catalyst in accommodating passage, and placing sandwich structure in heating device.

GAO B, ZHANG C, GU J, WU T, ZHU H

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M