国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B031/04（4）
发明人 ZHANG W（4）
公开年 2013（3）
申请年 2013（2） 
专利权人 CHONGQING IN.（2）

Preparing graphene thin films comprises processing copper foil blank and growing graphene films on copper foil where processing copper foil blank includes e.g. cleaning copper foil blank plasma, decontaminating and treating with oxide layer.

JIN H, LIU Z, QI X, PENG P, YANG H, ZHANG Z, ZHANG W, ZHANG X, DENG K

Preparing double-layer graphene thin film used in field of e.g. micro-electronics, comprises e.g. coating catalyst on the surface of metal foil/thin film substrate, drying, placing in reaction chamber, pumping vacuum, and filling hydrogen.

LI P, WANG Z, CHEN Y, ZHANG W, LIU J

Preparation device of graphene, has growth chamber which is connected with vacuum-pumping device, and growth substrate of growth chamber is wound on coil that is connected with alternating current source.

SHI H, LI Z, DU C, ZHANG W

Roll-to-roll graphene preparation device, comprises e.g. a sealed vacuum chamber and a roller comprising a driving roll for guiding graphene growing foil, growing roll for growing graphene and winding roll for winding graphene growing foil.

ZHANG W, LI Z, DU C, SHI H