国家/地区
IPC部 B（2） C（2）
IPC大类 B01（2）
IPC小类 B01J（2）
IPC B01J023/755（2）
发明人
公开年 2014（2）
申请年
专利权人

Manufacture of graphene for electric component, involves forming metal catalytic layer on substrate, introducing cover material on catalytic layer, and growing graphene on catalytic layer by carrying out chemical vapor deposition.

CHO K, BONG H, CHO K W

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K