国家/地区 美国（3） 日本（2） 韩国（2）
IPC部 B（3）
IPC大类 B01（3） C01（3） H01（3）
B82（2）
IPC小类 B01J（3）
IPC B01J023/755（3）
发明人
公开年 2014（3）
申请年 2014（2） 
专利权人

Preparing graphene, which is used for manufacturing semiconductor circuit, comprises supplying gas including carbon dioxide, methane and water on metal catalyst, and reacting and cooling the resultant.

SON I H, LEE S J

Graphene patterning method for forming graphene of predetermined pattern involves bringing a patterning member in which catalyst metal layer of predetermined pattern is formed into contact with substrate having graphene oxide film.

MATSUMOTO T, KASHIWAGI Y

Forming metal nanoparticle-graphene composite as electrocatalyst to form an electrode of fuel cell, comprises mixing metal precursor with graphite oxide, exfoliating the graphite oxide and reducing the metal precursor in formed mixture.

SUNDARA R, PARAMBATH V B, NAGAR R