国家/地区 日本（2）
IPC部 B（2）
IPC大类 B01（2） C01（2）
IPC小类 B01J（2）
IPC B01J023/755（2）
发明人
公开年 2013（2）
申请年
专利权人

Manufacture of catalyst metal layer for manufacturing graphene raw material used for transistor, involves forming film of catalyst metal, heating catalyst metal in high-temperature area and reducing temperature of catalyst metal.

NARITSUKA S, MARUYAMA T

Pre-processing method of catalyst metal layer during formation of graphene, involves activating catalyst metal layer by applying plasma of process gas containing reducible gas and nitrogen-containing gas to catalyst metal layer.

MATSUMOTO TAKASHI, MATSUMOTO T