国家/地区
IPC部 B（2）
IPC大类 B32（2） C01（2）
IPC小类 B32B（2）
IPC B32B043/00（2）
发明人
公开年 2018（2）
申请年
专利权人

Preparing graphene/metal composite material useful for high speed train insulated gate bipolar transistor packaging comprises e.g. preparing graphene oxide dispersion, coating layer of metal boron and titanium on surface of graphene film.

CHU K, WANG F, HUANG D, LI Y

Release of graphene layer from template substrate, for e.g. circuits, involves soaking graphene layer and template substrate in water such that water is intercalated between substrate and layer, and subjecting to delamination process.

BREMS S, HUYGHEBAERT C, VERGUTS K, DE GENDT S