国家/地区 韩国（3）
IPC部 B（3）
IPC大类 B82（3） C01（3） H01（3）
IPC小类 B82Y（3）
IPC B82Y010/00（3）
发明人
公开年 2012（3）
申请年 2012（3） 
专利权人 SAMSUNG ELEC.（2）

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Ferromagnetic graphene for spin valve device, comprises ferromagnetic graphene having ferromagnetic characteristics and antidote(s) in ferromagnetic graphene.

LEE S, LEE S H

Fabricating graphene thin film involves making graphene by reducing graphene oxide using sulfonyl hydrazide-based reducing agent, forming graphene dispersed solution by dispersing graphene into organic solvent, and applying solution to film.

NA S I, KIM D Y, KOO H Y, YUN J M, YEO J S, KIM J K