国家/地区 美国（3） 日本（2） 韩国（2） 世界知识产权组织（2）
IPC部 B（3）
IPC大类 B32（3）
IPC小类 B32B（3）
IPC C01B031/02（3）
发明人
公开年 2009（3）
申请年 2009（2） 
专利权人

Forming a single or few layer graphene film, useful as e.g. transistor device, comprises forming graphene film on substrate, coating film with protective support layer and etching surface of substrate to release film and protective layer.

CECCO A, DRESSELHAUS M, KONG J, CECCO A R, DRESSELHAUS M S

Graphene or graphite thin film used for diaphragm structure, is formed on cubic crystal silicon carbide crystal thin film using cubic silicon carbide crystal thin film having specific orientation formed on silicon substrate.

SUEMITSU M, KONNO A, MIYAMOTO Y, MAKI S, ASSEUSI G, YU M

Preparing graphene sheet, useful in e.g. electrical device, comprises forming film comprising graphitizing catalyst, heat-treating gaseous carbon source in presence of the catalyst to form graphene, and cooling graphene to form sheet.

CHOI J, SHIN H, YOON S, CHOI J Y, SHIN H J, YOON S M, IN Z