国家/地区 中国（4） 台湾（2） 美国（2）
IPC部 C（4）
IPC大类 C01（4） H01（2）
IPC小类 C01B（4）
IPC C01B031/04（4）
发明人 WEI C（4）
公开年 2013（2）
申请年 2013（2） 
专利权人 METAL IND RE.（2） UNIV XIDIAN（2）

Manufacturing negative plate of secondary battery, involves providing multiple sheets of functional graphene, and compressing functional graphene to faun graphene target.

HUANG C, CHIU S, CHU C, CHUANG Y, WANG C, WEI C, HUANG J, QIU S, ZHU J, ZHUANG Y, WANG Z, WEI J, WANG J

Method for modifying e.g. I-V characteristics, of graphene i.e. semiconductor film, involves placing graphene film in vacuum environment, and radiating graphene film with electron beam to obtain graphene material.

HUANG C, CHU C, CHIU S, WANG C, WEI C, CHUNG C, WU B, HUANG J, QIU S, WANG J, ZHU J, WEI J, ZHONG C, HUANG C H, CHU C W, CHIU S M, WANG C C, WEI C M, CHUNG C J, WU B H

Graphene preparation method for nickel film annealing of silicon carbide substrate involves generating carbon film, introducing nickel film via growth device, electron beam evaporation and deposition and depositing nickel onto carbon film.

GUO H, LEI T, WEI C, ZHANG Y, ZHANG C

Preparing large-area graphene based on nickel film annealing and chlorine reaction comprises e.g. growing carbon layer on substrate, growing 3C-silicon carbide heteroepitaxial film, hydrogen etching, depositing nickel layer and annealing.

GUO H, LEI T, WEI C, ZHANG F, ZHANG Y