国家/地区 日本（2）
IPC部 C（2） H（2）
IPC大类 C01（2） H05（2）
IPC小类 C01B（2）
IPC C01B032/182（2）
发明人
公开年
申请年
专利权人 TOKYO ELECTRON LTD（2）

Manufacture of graphene structure used for wiring, involves preparing substrate to be processed, and forming graphene structure on substrate surface by plasma chemical vapor deposition using plasma of process gas containing oxidizing gas.

RYOTA I, TAKASHI M, IFUKU R, MATSUMOTO T

Processing of to-be-processed material for electronic device, involves forming resist mask on graphene film of to-be-processed material and remove resist residue on graphene film by exposing to-be-processed material to oxygen radicals.

KAGAYA MUNEHITO, KAGAYA M