国家/地区 中国（5）
IPC部 C（5）
IPC大类 C01（5）
IPC小类 C01B（5）
IPC C01B032/186（5）
发明人 LIN L（5）
公开年 2018（3） 2017（2）
申请年 2017（3）  2016（2） 
专利权人 UNIV PEKING（4）

Preparation of ultra-clean graphene involves using chemical vapor deposition, and providing foam copper above growth substrate.

LIU Z, PENG H, LIN L, ZHANG J, SUN L

Preparing graphene involves putting foam copper in copper substrate, introducing carbon source gas and hydrogen to perform chemical vapor deposition, and depositing surface that contacts copper substrate with foam copper.

LIU Z, PENG H, LIN L, ZHANG J

Preparing ultra-clean graphene used in optical and electric field, involves adding copper substrate in tubular furnace, introducing carbon source gas and hydrogen for chemical vapor deposition and introducing carbon dioxide.

LIU Z, PENG H, ZHANG J, GU K, LIN L, SUN L

Preparation of ultraclean graphene comprises considering gas path from upstream to downstream direction, placing copper acetate and copper substrates at intervals and introducing hydrogen for chemical vapor deposition.

LIU Z, PENG H, GU K, ZHANG J, LIN L, SUN L

Preparing hexagonal graphene nano structure comprises e.g. taking the copper foil as graphene growth substrate, placing copper foil in quartz tube type furnace, filling inert gas, maintaining the temperature of the tubular furnace.

LIU J, XU Y, ZUO Z, LIN L, HUANG Z, LAI F, ZUO C