国家/地区
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B032/182（2）
发明人 KIM H（2）
公开年 2017（2）
申请年
专利权人

Method for forming multilayer graphene for e.g. stackable device, involves forming multilayer graphene on area of graphene at temperature by using source gas, where source gas used to form graphene is different from source gas.

HYOWON K, KIM H, KIM H W, JIN X

Manufacture of porous graphene component involves introducing carbon source and substitution source in vapor deposition furnace, and simultaneously depositing carbon monoatomic layer on substrate positioned in furnace.

KIM H, KWON G