国家/地区 德国（2）
IPC部 C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B032/182（2）
发明人
公开年
申请年 2019（2）
专利权人

Formation of diode for electronic application, involves providing graphene layer structures on substrates, treating structures with oxidant to form graphene oxide surface, and aligning structure against graphene oxide surface of structure.

WALLIS R, WALLACE R

Manufacture of graphene used as e.g. anode material, involves pretreating by pulverizing vegetable raw material to obtain carbon source and carbonizing by introducing inert gas into chamber and heating carbon source under plasma atmosphere.

KINOSHITA T, OTA K, OOTA K