国家/地区 中国（2）
IPC部 B（2） C（2）
IPC大类 C01（2）
IPC小类 C01B（2）
IPC C01B032/956（2）
发明人
公开年 2016（2）
申请年 2016（2） 
专利权人

Preparation of silicon carbide nanowire comprises mixing silicon and silicon dioxide, adding graphene, mixing, placing in vacuum sintering furnace filled with argon, vacuum sintering and cooling to room temperature.

GUO H, HU Z, XU J, ZHAN Y

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F