国家/地区 中国（3）
IPC部 B（3） C（3）
IPC大类 B82（3）
IPC小类 B82Y（3）
IPC C23C016/26（3）
发明人 WANG H（3）
公开年
申请年
专利权人 SHANGHAI INS.（2）

Graphene boundary control method comprises providing an insulating substrate, placing in a growth chamber, introducing first reaction gas and controlling the flowrate of first reaction gas.

WANG H, CHEN L, HE L, XIE H, WANG X, XIE X

Growing nanostructured single layer graphene film involves selecting copper foil and then annealing selected material with graphene under mixed atmosphere of argon and hydrogen high temperature.

DONG J, HE H, LI K, WANG H, ZENG X

Preparation of graphene by selecting substrate material, depositing directly catalyst and tetrabromomethane on substrate surface, and annealing substrate.

DI Z, DING G, GONG Q, LIU Q, WANG H, WANG S, XIE X