国家/地区 日本（2）
IPC部 B（2） C（2）
IPC大类 B82（2）
IPC小类 B82Y（2）
IPC B82Y030/00（2）
发明人
公开年
申请年 2011（2）
专利权人

Manufacture of single crystal insulated substrate for electronic device involves preparing single crystal insulated substrate, fixing graphene to substrate surface, and positioning protein which has core particle on graphene.

OGINO T, TSUKAMOTO T, IIDA Y, KOYAMA K

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O