国家/地区 美国（3） 世界知识产权组织（3） 日本（2） 韩国（2）
IPC部 C（3） H（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC H01J037/32（3）
发明人
公开年 2021（3）
申请年 2020（3）
专利权人

Film forming by cleaning interior of treatment container, extracting and removing oxygen inside treatment container, introducing substrate into treatment container, and forming carbon film on substrate by plasma chemical vapor deposition.

MAKOTO W, TAKASHI M, NOBUTAKE K, RYOTA I, MASAHITO S, HIROKAZU U, MATSUMOTO T, KABURAGI N, IFUKU R, SUGIURA M, UEDA H, WADA M, KABUKI N

Depositing graphene on a metal surface of substrate by providing substrate including metal surface in reaction chamber, flowing hydrocarbon precursors into reaction chamber and toward the substrate, and generating radicals of hydrogen.

VARADARAJAN B N, NARKEVICIUTE I

System for growing crystalline material, has optical emission spectrometer (OES) that controls parameter in closed loop and maintains required proposition of plasma constituent for growth of crystalline materials in microwave plasma reactor.

SHARDA T, BHANDARI R, RAJNEESH B, TARUN S