国家/地区 中国（2）
IPC部 B（2）
IPC大类 C01（2） H01（2）
IPC小类 C01B（2）
IPC H01L021/02（2）
发明人
公开年
申请年 2010（2）
专利权人

Manufacture of semiconductor device e.g. field effect transistor used in mobile telephone base station, involves forming catalyst film on substrate, growing graphene on catalyst layer, forming gap and removing catalyst film.

HAYASHI K, SATO S

Releasing graphene layer from substrate, comprises forming graphene layer on surface of first substrate, forming metal layer on a surface of graphene layer and applying a pulling force on the metal layer to detach graphene layer.

OGIHARA M, SAGIMORI T, SAKUTA M, HASHIMOTO A, TANAKA S, OGIWARA M, MITSUHIKO O, TOMOHIKO S, MASAAKI S, AKIHIRO H