国家/地区 美国（4） 日本（3） 世界知识产权组织（3） 中国（2） 欧洲专利局（EPO）（2）
IPC部 C（4）
IPC大类 C01（4） H01（4） B82（3）
IPC小类 C01B（4）
IPC C01B031/02（4）
发明人
公开年 2012（2）
申请年 2010（4）
专利权人

Forming recrystallized metal layer for growing graphene monolayer involves forming metal layer on substrate; forming layer of dielectric material on the metal layer; and directionally recrystallizing the metal layer.

YAGER T A

Manufacture of semiconductor device e.g. field effect transistor used in mobile telephone base station, involves forming catalyst film on substrate, growing graphene on catalyst layer, forming gap and removing catalyst film.

HAYASHI K, SATO S

Composition, useful in electrode, which is useful in display device comprising e.g. organic light emitting display device, and in solar cell, comprises graphene and dopant comprising an organic dopant and/or inorganic dopant.

SHIN H, CHOI W, CHOI J, YOON S, SHIN H J, CHOI W M, CHOI J Y, YOON S M

Platelet useful in electronic device comprises graphene layer and a protein layer on the surface of the graphene layer.

LAAKSONEN P, AHOPELTO J, LINDER M