国家/地区 韩国（3） 美国（3） 世界知识产权组织（2）
IPC部 B（4）
IPC大类 C01（4） B01（3） C23（3）
H01（3） B82（2）
IPC小类 C01B（4）
IPC C01B031/02（3） C23C016/26（3） B01J019/08（2）
B82Y040/00（2） H01B001/04（2） H01L021/268（2）
发明人 LEE K（4）
公开年 2012（4）
申请年 2011（4） 
专利权人 KOREA ADV IN.（2）

Manufacture of graphene for fabricating graphene semiconductor device, involves contacting reaction gas for graphene growth on substrate surface, heating substrate, and growing graphene.

LEE K, CHOI I, LEE K J, CHOI I S, JAE L G, SEONG C I

Forming graphene, comprises providing substrate and carbon-containing reactant source in chamber, and radiating laser beam on substrate to decompose carbon-containing reactant source and form graphene over substrate.

LEE K, CHOI I, CHOI S, HONG B, LEE K J, CHOI I S, CHOI S Y, HONG B H

Method of directly synthesizing uniform multilayer graphene of semiconductor device, involves passing reaction gas into reaction chamber, after temperature in reaction chamber reaches specific level.

ZHONG Z, LEE S, LEE K

Ball-milled graphene nano-powder or ribbon purifying method, involves separating magnetic impurities during stirring suspension using magnet, where impurities are incorporated into graphene powder during ball-milling.

LEE J K, LEE K, LEE K I, GAP L J, IL L G