国家/地区 美国（3）
IPC部 C（3）
IPC大类 C01（3） H01（2）
IPC小类 C01B（3）
IPC C01B031/04（3）
发明人 LIN S（3）
公开年 2016（2）
申请年
专利权人

Semiconductor device e.g. transistor, has second active area, graphene channel that is formed between first and second active areas, comprises first and second sides and first in-plane gate that is proximate to first side.

LIN M, LIN S, LEE S, LIN M Y, LIN S Y, LEE S C, LI S

Preparation of large size graphene oxide or graphene used for, e.g. flexible display by mixing graphite and intercalation agent, soaking in expansion agent, adding acid and oxidizing agent mixture, filtering, washing, and stripping.

DONG L, LIN S, LU H, MA C

Manufacturing graphene film comprises annealing first substrate in furnace filled with mixed gas, moving substrate into growing chamber of molecular beam epitaxy system, heating carbon source and depositing it on surface of substrate.

LIN S, LIN M, LIN S Y, LIN M Y